Diffusion and thermal stability of hydrogen in homoepitaxial CVD diamond films

被引：32

作者：

Ballutaud, D

Jomard, F

Le Duigou, J

Theys, B

Chevallier, J

Deneuville, A

Pruvost, F

机构：

[1] CNRS, UMR 8635, Lab Phys Solides & Cristallogenese, F-92195 Meudon, France

[2] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble, France

来源：

关键词：

CVD diamond; diffusion; films; homoepitaxy; hydrogen; thermal stability;

D O I：

10.1016/S0925-9635(99)00273-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The diffusion and out-diffusion properties of hydrogen have been investigated in homoepitaxial layers of CVD boron-doped diamond which have been exposed to a deuterium microwave plasma. The diffusion experiments show that the onset of (B, H) pair dissociation occurs at 550 degrees C. The hydrogen diffusion activation energy is 1.4 eV. Hydrogen out-diffuses at 880 degrees C and the diamond surface barrier limits the out-diffusion process. In r.f, plasma exposed diamond epilayers, the hydrogen out-diffusion spectra are composed of a peak at 720 degrees C related to the subsurface hydrogen accumulation layer and another one at 840 degrees C attributed to the hydrogen adsorbed at the surface. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：1171 / 1174

页数：4

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