Capacitance-Voltage (C-V) characterization of 20 Å thick gate oxide:: parameter extraction and modeling

This paper reports the Capacitance-Voltage (C-V) characterization of gate oxide in the 20 Angstrom thickness range, dealing especially with quantum and polysilicon effects. In the first part, the basis of Poisson-Schrodinger modeling is summarized. The extraction procedure of doping level, flat band voltage, threshold voltage, and oxide thickness is presented. A simple method to extract the polysilicon doping level and to correct for polysilicon effect on C(V) curves is proposed. These parameter extraction procedures are illustrated by experimental data obtained on both NMOS and PMOS transistors. (C) 2000 Elsevier Science Ltd. All rights reserved.