Real space transfer in a velocity modulated transistor structure

We report experimental, room temperature data showing real space transfer in a heterostructure which can support the movement of electrons over a barrier in both directions between two channels. Real space transfer occurs between two channels connected in parallel in a three-gate transistor, which has been developed to interrogate the channel populations, Results are presented that demonstrate real space transfer in a heterostructure which features a 2.5:1 mobility ratio between channels. This heterostructure is designed for use in a velocity modulation transistor, which requires reciprocal, gate-assisted transfer between two channels of differing mobilities. (C) 1997 American Institute of Physics.