ENSEMBLE MONTE-CARLO SIMULATION OF A VELOCITY-MODULATION FIELD-EFFECT TRANSISTOR (VMT)

被引：14

作者：

KIZILYALLI, IC ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 09期

关键词：

D O I：

10.1143/JJAP.26.1519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1519 / 1524

页数：6

共 10 条

[1] PHYSICS AND MODELING OF HOT-ELECTRON EFFECTS IN SUB-MICRON DEVICES [J].

CASTAGNE, R .

PHYSICA B & C, 1985, 134 (1-3) :55-66

[2]

CONSTANT E, 1984, HOT ELECTRON TRANSPO, pCH8

[3]

HIRAKAWA K, 1985, PHYS REV LETT, V54, P614

[4] ELECTRON-TRANSFER BETWEEN ADJACENT CHANNELS SIMULATED BY ENSEMBLE MONTE-CARLO METHODS [J].

KIZILYALLI, IC ;

HESS, K ;

IAFRATE, GJ .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2395-2398

[5] SCALING PROPERTIES OF HIGH ELECTRON-MOBILITY TRANSISTORS [J].

KIZILYALLI, IC ;

HESS, K ;

LARSON, JL ;

WIDIGER, DJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) :1427-1433

[6]

KIZILYALLI IC, 1986, DEC INT C NUM MOD SE

[7] A MONTE-CARLO PARTICLE STUDY OF THE INTRINSIC NOISE-FIGURE IN GAAS-MESFET [J].

MOGLESTUE, C .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) :2092-2096

[8] TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD [J].

RUCH, JG ;

FAWCETT, W .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3843-&

[9] VELOCITY-MODULATION TRANSISTOR (VMT) - A NEW FIELD-EFFECT TRANSISTOR CONCEPT [J].

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06) :L381-L383

[10] CALCULATION OF THE ELECTRON VELOCITY DISTRIBUTION IN HIGH ELECTRON-MOBILITY TRANSISTORS USING AN ENSEMBLE MONTE-CARLO METHOD [J].

WANG, T ;

HESS, K .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5336-5339

← 1 →