Improved electric properties in BiFeO3 films by the doping of Ti

被引：81

作者：

Liu, Hongri

Liu, Zuli ^{[1
]}

Yao, Kailun

机构：

[1] Huazhong Univ Sci & Technol, Dept Phys, Wuhan 430074, Peoples R China

[2] Hubei Normal Univ, Dept Phys, Huangshi 435002, Peoples R China

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2007年 / 41卷 / 02期

基金：

中国国家自然科学基金;

关键词：

sol gel; magnetism; ferroelectricity; leakage conduction; dielectric constant; CHEMICAL SOLUTION DEPOSITION; THIN-FILMS; MAGNETIC-PROPERTIES;

D O I：

10.1007/s10971-006-0514-x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We prepared BiFe1-x Ti (x) O3+delta (BFTO) films by sol gel process and various oriented films were deposited on LaNiO3 coated SiO2/Si substrates with different x. The effects of Ti substitution on dielectric, ferroelectric, magnetic and leakage conduction properties in BFTO system have been studied. Enhanced ferroelectricity was observed at room temperature due to the substitution of Ti. The largest double remnant polarization of 3.8 mu C/cm(2) was acquired in the film with x = 0.10. Further more, it was observed that the dielectric constants were also enhanced by the substitution of Ti. The film with x = 0.10 has the largest dielectric constant below 100 kHz and Debye-like relaxation were observed in the films with x = 0.05 and 0.10. The leakage conduction was reduced with the increasing of the content of Ti. More over, the magnetism was also altered by the substitution.

引用

页码：123 / 128

页数：6

共 20 条

[1] Preparation of conductive LaNiO3 film electrodes by a simple chemical solution deposition technique for integrated ferroelectric thin film devices [J].