Preparation of conductive LaNiO3 film electrodes by a simple chemical solution deposition technique for integrated ferroelectric thin film devices

Well-crystallized LaNiO3 (LNO) thin films were grown on thermally oxidized silicon (SiO2/Si) and SrTiO3 substrates by a simple chemical solution deposition (CSD) technique. The LNO thin films obtained had pseudocubic phase without the existence of impurity phase. The LNO films on SiO2/Si substrates were polycrystalline, dense, and randomly oriented with a uniform surface and cross-section, whereas those on SrTiO3 substrates were (100) highly oriented with uniform grain size. The room temperature resistivity of the films on SiO2/Si substrates annealed at 750degreesC was about 0.54 mOmega cm, which is much lower than that of the films derived by the water-based solution technique. The subsequent deposition and, electrical measurements of PbTiO3, (Pb,La)TiO3, Pb(ZrTi)O-3 thin films on the CSD derived LNO/SiO2/Si confirmed the LNO films to be promising electrode materials for ferroelectric thin films.