A study of ferroelectric thin films deposited on a LaNiO3 barrier electrode by nebulized spray pyrolysis

被引：19

作者：

Murugavel, P ^{[1
]}

Sharma, R

Raju, AR

Rao, CNR

机构：

[1] Indian Inst Sci, Ctr Mat Res, Bangalore 560012, Karnataka, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2000年 / 33卷 / 08期

关键词：

D O I：

10.1088/0022-3727/33/8/304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of ferroelectric PbTiO3 (PT) and Pb(Zr0.5Ti0.5)O-3 (PZT) as well as antiferroelectric PbZrO3 (PZ) have been prepared on LaNiO3/SiO2/Si substrates by nebulized spray pyrolysis (NSP) of metal-organic precursors. The metallic LaNiO3 (LNO) electrode layer was also deposited by NSP. The ferroelectric films obtained show satisfactory morphology and desirable dielectric properties. Typical values of the coercive field, remnant polarization and dielectric constant (300 K) for the PT/lNO/SiO2/Si film are 170 kV cm(-1), 22 mu C cm(-2) and 210, respectively, with the corresponding values for the PZT/LNO/SiO2/Si film being 120 kV cm(-1), 13 mu C cm(-2) and 540, respectively. The PZ/LNO/SiO2/Si film shows typical antiferroelectric characteristics including the electric-field induced reversible antiferroelectric-ferroelectric transition. The various films deposited on LNO/SiO2/Si by NSP are comparable in all respects to those prepared on Pt/Ti/SiO2/Si by the same technique.

引用

页码：906 / 911

页数：6

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