PREPARATION AND CHARACTERIZATION OF LEAD-ZIRCONATE-TITANATE THIN-FILMS BY DC REACTIVE COSPUTTERING

被引：2

作者：

CHO, NH

KIM, HG

机构：

[1] Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong-gu, Taejon, 373-1, Kusong-dong

来源：

INTEGRATED FERROELECTRICS | 1995年 / 6卷 / 1-4期

关键词：

D O I：

10.1080/10584589508019378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lead zirconate titanate(PZT) thin films have been grown on Pt/SiO2/Si substrate by DC reactive sputteing using multiple metal target. The experimental conditions to form the PZT phase on Pt substrate and electrical properties were systematically studied by changing the Zr content and substrate temperature: The film deposited at 600 degrees C had (001) preferred orientation and had high dielectric constant. The annealed film at 650 degrees C had high remanent polarization and high fatigue resistance to 10(9) cycles.

引用

页码：345 / 353

页数：9

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