Structure, dissociation, and the vibrational signatures of hydrogen clusters in amorphous silicon

被引:17
作者
Tuttle, B [1 ]
Adams, JB [1 ]
机构
[1] ARIZONA STATE UNIV, DEPT CHEM BIO & MAT ENGN, TEMPE, AZ 85287 USA
关键词
D O I
10.1103/PhysRevB.56.4565
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We use quantum molecular dynamics to study the structure, dissociation, and vibrational signatures of hydrogen clusters in amorphous silicon. Four structural models of hydrogenated amorphous silicon and two bulk c-Si:H structures are used for our study. We compare the properties of hydrogen clusters found in the structural models with other theoretical models and experimental measurements. By examining the energetics of H in these models, we gain insight into the trapping levels for H in a-Si:H films. In addition. we examine the geometric and vibrational properties of the hydrogen clusters as they dissociate. Our simulations are used to interpret the results of recent experiments including a low-temperature infrared study of hydrogenated amorphous silicon during light soaking.
引用
收藏
页码:4565 / 4572
页数:8
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