OBSERVATION BY INFRARED TRANSMISSION SPECTROSCOPY AND INFRARED ELLIPSOMETRY OF A NEW HYDROGEN-BOND DURING LIGHT-SOAKING OF A-SI-H

被引:35
作者
DARWICH, R [1 ]
CABARROCAS, PRI [1 ]
VALLON, S [1 ]
OSSIKOVSKI, R [1 ]
MORIN, P [1 ]
ZELLAMA, K [1 ]
机构
[1] UNIV DENIS DIDEROT, CNRS, UA 17, PHYS SOLIDES GRP, F-75251 PARIS 05, FRANCE
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1995年 / 72卷 / 03期
关键词
D O I
10.1080/13642819508239090
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Evidence for participation of atomic hydrogen in the Light-induced metastability mechanism of hydrogenated amorphous silicon (a-Si:H) has been observed by low-temperature infrared transmission spectroscopy and room-temperature infrared phase-modulated ellipsometry. A band at 1730 cm (-1) accompanied by an increase of the amplitude of the bending mode or a new broad band at similar to 870 cm (-1) was observed after 1 h of intense illumination of an annealed a-Si:H sample. A shift to lower frequencies of this band is observed with prolonged light-soaking time and the band disappears after similar to 4h of illumination. At the same time the density of atomic hydrogen bonded to silicon decreases, as inferred from the area under the broad band at similar to 640 cm(-1). Our results can be interpreted by a hydrogen diffusion model in which the hydrogen atom of a Si-H bond next to a weak Si-Si bond diffuses to form a three-centre bond at intermediate illumination times, then diffuses further to form a stable Si-H bond at longer times.
引用
收藏
页码:363 / 372
页数:10
相关论文
共 28 条
[1]   DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON [J].
ADLER, D .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :3-14
[2]   INFRARED INTENSITIES IN SIH4 AND SID4 [J].
BALL, DF ;
MCKEAN, DC .
SPECTROCHIMICA ACTA, 1962, 18 (08) :1019-1028
[3]   INSITU STUDY OF THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON BY INFRARED ELLIPSOMETRY [J].
BLAYO, N ;
DREVILLON, B .
APPLIED PHYSICS LETTERS, 1991, 59 (08) :950-952
[4]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[5]   A FULLY AUTOMATED HOT-WALL MULTIPLASMA-MONOCHAMBER REACTOR FOR THIN-FILM DEPOSITION [J].
CABARROCAS, PRI ;
CHEVRIER, JB ;
HUC, J ;
LLORET, A ;
PAREY, JY ;
SCHMITT, JPM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (04) :2331-2341
[6]   LIGHT-INDUCED EFFECTS ON THE OPTICAL-ABSORPTION OF A-SI-H [J].
CABARROCAS, PRI ;
CHAHED, L ;
DREVILLON, B ;
THEYE, ML .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1988, 104 (01) :59-61
[7]   PHASE-MODULATED ELLIPSOMETER USING A FOURIER-TRANSFORM INFRARED SPECTROMETER FOR REAL-TIME APPLICATIONS [J].
CANILLAS, A ;
PASCUAL, E ;
DREVILLON, B .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1993, 64 (08) :2153-2159
[8]   VIBRATIONAL-SPECTRA OF HYDROGEN IN SILICON AND GERMANIUM [J].
CARDONA, M .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (02) :463-481
[9]   NEUTRALIZATION OF DEFECTS AND DOPANTS IN III-V SEMICONDUCTORS [J].
CHEVALLIER, J ;
CLERJAUD, B ;
PAJOT, B .
SEMICONDUCTORS AND SEMIMETALS, 1991, 34 (0C) :447-510