Ab initio structure and energetics for the molecular and dissociative adsorption of NH3 on Si(100)-2 x 1

被引:77
作者
Fattal, E [1 ]
Radeke, MR [1 ]
Reynolds, G [1 ]
Carter, EA [1 ]
机构
[1] UNIV CALIF LOS ANGELES,DEPT CHEM & BIOCHEM,LOS ANGELES,CA 90095
来源
JOURNAL OF PHYSICAL CHEMISTRY B | 1997年 / 101卷 / 43期
关键词
D O I
10.1021/jp9712967
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We predict the structures and detailed energetics for the dissociative adsorption of NH3 to form NH2 and H adsorbed on a single Si dimer on the Si(100)-2 x 1 surface at the MRSDCI (multireference single and double excitation configuration interaction) level of theory. We predict that this dissociation involves two steps: (i) barrierless molecular chemisorption of NH3 followed by (ii) activated N-H bond cleavage of NH;,,, to form NH2(a) + H-(a). While the second step involves a barrier, its relatively small height renders the overall reaction barrierless. The extremely high adsorption exothermicity (similar to 75 kcal/mol) results in a very high desorption barrier. These results can explain the experimentally determined high sticking probability of NH3, the observation of NH3(a), at low temperatures, and the observed stability of NH2(a) and H-(a) on the Si(100) surface up to similar to 600 K. Additionally, our CASSCF level (complete active space self-consistent-field) calculated geometries for the dissociatively adsorbed species agree with structures proposed to explain experimental data.
引用
收藏
页码:8658 / 8661
页数:4
相关论文
共 43 条
[11]   CONTRASTED BEHAVIOR OF SI(001) AND SI(111) SURFACES WITH RESPECT TO NH3 ADSORPTION AND THERMAL NITRIDATION - A N 1S AND SI 2P CORE-LEVEL STUDY WITH SYNCHROTRON-RADIATION [J].
DUFOUR, G ;
ROCHET, F ;
ROULET, H ;
SIROTTI, F .
SURFACE SCIENCE, 1994, 304 (1-2) :33-47
[12]  
Dunning T.H., 1977, METHODS ELECT STRUCT
[13]  
DUPUIS A, 1995, HONDO 95 3 CHEM STAT
[14]  
Fletcher R., 1981, PRACTICAL METHODS OP
[15]   Local structure of NH2 on Si(100)-(2x1) and its effect on the asymmetry of the Si surface dimers [J].
Franco, N ;
Avila, J ;
Davila, ME ;
Asensio, MC ;
Woodruff, DP ;
Schaff, O ;
Fernandez, V ;
Schindler, KM ;
Fritzsche, V ;
Bradshaw, AM .
PHYSICAL REVIEW LETTERS, 1997, 79 (04) :673-676
[16]   ELECTRON-ENERGY-LOSS SPECTRA OF THE SI(100)-(2X1) SURFACE EXPOSED TO NH3 [J].
FUJISAWA, M ;
TAGUCHI, Y ;
KUWAHARA, Y ;
ONCHI, M ;
NISHIJIMA, M .
PHYSICAL REVIEW B, 1989, 39 (17) :12918-12920
[17]   KINETICS OF SI(100) NITRIDATION 1ST STAGES BY AMMONIA - ELECTRON-BEAM-INDUCED THIN-FILM GROWTH AT ROOM-TEMPERATURE [J].
GLACHANT, A ;
SAIDI, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :985-991
[18]  
GODDARD WAR, 1982, J VAC SCI TECHNOL, V21, P344
[19]   IMAGING OF CHEMICAL-BOND FORMATION WITH THE SCANNING TUNNELING MICROSCOPE - NH3 DISSOCIATION ON SI(001) [J].
HAMERS, RJ ;
AVOURIS, P ;
BOZSO, F .
PHYSICAL REVIEW LETTERS, 1987, 59 (18) :2071-2074
[20]   PHOTOEMISSION-STUDY OF AMMONIA DISSOCIATION ON SI(100) BELOW 700-K [J].
HLIL, EK ;
KUBLER, L ;
BISCHOFF, JL ;
BOLMONT, D .
PHYSICAL REVIEW B, 1987, 35 (11) :5913-5914