Auger heating of carriers in GaAs/AlAs heterostructures

被引：15

作者：

Borri, P

Ceccherini, S

Gurioli, M

Bogani, F

机构：

[1] UNIV FLORENCE,DIPARTIMENTO ENERGET,UNITA INFM,I-50139 FLORENCE,ITALY

[2] UNIV FLORENCE,LENS,I-50125 FLORENCE,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 103卷 / 02期

关键词：

quantum wells; semiconductors; electron-electron interactions; time-resolved optical spectroscopies;

D O I：

10.1016/S0038-1098(97)00150-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The photoluminescence of GaAs/AlAs multiple quantum wells structures under optical ps excitation is investigated for carrier densities in the range 10(18)-4 x 10(19) cm(-3) with frequency and time-resolved spectroscopic techniques. The measurements give a direct evidence of the occurrence in the sample of carrier heating. This energy up-conversion gives rise to photoluminescence from the states near the Fermi level whose intensity and time evolution depend on the carrier density in a strongly non-linear way. The observed behaviour can be explained introducing in the carrier dynamics an up-conversion mechanism due to Auger-like processes. (C) 1997 Elsevier Science Ltd.

引用

页码：77 / 81

页数：5

共 21 条

[1] AUGER RECOMBINATION IN LOW-DIMENSIONAL STRUCTURES [J].