AUGER RECOMBINATION IN QUANTUM-WELL SEMICONDUCTORS - CALCULATION WITH REALISTIC ENERGY-BANDS

被引：25

作者：

HAUG, A

机构：

[1] Max-Planck-Inst. fur Festkorperforschung, Stuttgart

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 11期

关键词：

D O I：

10.1088/0268-1242/7/11/008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Auger recombination (AR) in quantum well (QW) semiconductors is re-investigated taking into account a realistic band structure instead of the usual parabolic approximation. Since direct AR is negligible in QWS phonon-assisted AR is treated. The theoretical results are in good agreement with experimental investigations. In contrast, the description of QWS by a reduced heavy-hole mass is insufficient. The influence Of AR on the temperature dependence of semiconductor lasers is discussed.

引用

页码：1337 / 1340

页数：4

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