PHONON-ASSISTED AUGER RECOMBINATION IN QUANTUM-WELL SEMICONDUCTORS

被引：14

作者：

HAUG, A ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 51卷 / 04期

关键词：

42.55Px; 73.20Dx; 79.20Fv;

D O I：

10.1007/BF00324320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phonon-assisted Auger recombination (AR) is shown to be an important loss mechanism in a quantum well semiconductor in addition to the direct AR. Theoretical investigations demonstrate that it is of the same order of magnitude and has the same temperature dependence as in bulk material, just as direct AR, provided that the material parameters and the carrier concentrations are the same as in the bulk. © 1990 Springer-Verlag.

引用

页码：354 / 356

页数：3

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