TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS WITH DIFFERENT COMPOSITIONS

被引：9

作者：

HAUG, A ^{[1
]}

BURKHARD, H ^{[1
]}

机构：

[1] FORSCHUNGSINST DEUTSCH BUNDESPOST,D-6100 DARMSTADT,FED REP GER

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1987年 / 134卷 / 02期

关键词：

D O I：

10.1049/ip-j.1987.0019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：117 / 122

页数：6

共 26 条

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[7] EVIDENCE OF THE IMPORTANCE OF AUGER RECOMBINATION FOR INGAASP LASERS
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02): : 357 - 365
[9] AUGER RECOMBINATION IN DIRECT-GAP SEMICONDUCTORS - BAND-STRUCTURE EFFECTS
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (21): : 4159 - 4172
[10] THEORY OF THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF AN INGAASP LASER
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) : 716 - 718

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