TEMPERATURE BEHAVIOR OF OPTICAL-ABSORPTION IN INGAASP LASERS

被引：1

作者：

DUTTA, NK

OLSSON, NA

SHEN, TM

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.95049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1023 / 1025

页数：3

共 10 条

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[2] THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS [J].

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ITAYA, Y ;

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[3]

DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380

[4] THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y [J].

DUTTA, NK ;

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[5] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT OF INJECTION-LASERS FOR SHORT PULSE EXCITATION [J].

DUTTA, NK ;

OLSSON, NA ;

HERITAGE, JP ;

LIU, PL .

APPLIED PHYSICS LETTERS, 1984, 44 (10) :943-944

[6]

DUTTA NK, 1984, J LIGHTWAVE TECHNOL, V2, P201

[7]

HORIKOSHI Y, 1982, GAINASP ALLOY SEMICO, pCH15

[8]

KAMINOW IP, 1979, ELECTRON LETT, V15, P764

[9] THRESHOLD TEMPERATURE-DEPENDENCE OF SUBNANOSECOND OPTICALLY-EXCITED 1.3-MU-M INGAASP LASERS [J].

MARTINEZ, OE ;

HERITAGE, JP ;

MILLER, BI ;

DUTTA, NK ;

NELSON, RJ .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :578-580

[10] BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD [J].

SUGIMURA, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :627-635

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