TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT OF INJECTION-LASERS FOR SHORT PULSE EXCITATION

被引：9

作者：

DUTTA, NK ^{[1
]}

OLSSON, NA ^{[1
]}

HERITAGE, JP ^{[1
]}

LIU, PL ^{[1
]}

机构：

[1] REG BELL OPERATING CO,CENT SERV ORG,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 10期

关键词：

D O I：

10.1063/1.94605

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：943 / 944

页数：2

共 11 条

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[2]

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[3]

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[4]

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[7] MEASUREMENTS OF INTENSITY FLUCTUATIONS OF AN INGAASP EXTERNAL CAVITY LASER [J].

LIU, PL ;

EISENSTEIN, G ;

TUCKER, RS ;

KAMINOW, IP .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :481-483

[8] THRESHOLD TEMPERATURE-DEPENDENCE OF SUBNANOSECOND OPTICALLY-EXCITED 1.3-MU-M INGAASP LASERS [J].

MARTINEZ, OE ;

HERITAGE, JP ;

MILLER, BI ;

DUTTA, NK ;

NELSON, RJ .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :578-580

[9]

MITO I, 1983, J LIGHTWAVE TECHNOL, V1, P195

[10] GAIN-CURRENT RELATION FOR GAAS LASERS WITH N-TYPE AND UNDOPED ACTIVE LAYERS [J].

STERN, F .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :290-294

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