Nonvolatile resistive switching in graphene oxide thin films

被引：229

作者：

He, C. L. ^{[1
]}

Zhuge, F. ^{[1
]}

Zhou, X. F. ^{[1
]}

Li, M. ^{[1
]}

Zhou, G. C. ^{[1
]}

Liu, Y. W. ^{[1
]}

Wang, J. Z. ^{[1
]}

Chen, B. ^{[1
]}

Su, W. J. ^{[1
]}

Liu, Z. P. ^{[1
]}

Wu, Y. H. ^{[2
]}

Cui, P. ^{[1
]}

Li, Run-Wei ^{[1
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 23期

基金：

中国国家自然科学基金;

关键词：

RESISTANCE; MEMORY;

D O I：

10.1063/1.3271177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reliable and reproducible resistive switching behaviors were observed in graphene oxide (GO) thin films prepared by the vacuum filtration method. The Cu/GO/Pt structure showed an on/off ratio of about 20, a retention time of more than 10(4) s, and switching threshold voltages of less than 1 V. The switching effect could be understood by considering the desorption/absorption of oxygen-related groups on the GO sheets as well as the diffusion of the top electrodes. Our experiments indicate that GO is potentially useful for future nonvolatile memory applications. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3271177]

引用

页数：3

共 21 条

[1] Carbon-based electronics [J].

Avouris, Phaedon ;

Chen, Zhihong ;

Perebeinos, Vasili .

NATURE NANOTECHNOLOGY, 2007, 2 (10) :605-615

[2] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[3] Carbon-Based Field-Effect Transistors for Nanoelectronics [J].

Burghard, Marko ;

Klauk, Hagen ;

Kern, Klaus .

ADVANCED MATERIALS, 2009, 21 (25-26) :2586-2600

[4] Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications [J].

Chang, Wen-Yuan ;

Lai, Yen-Chao ;

Wu, Tai-Bor ;

Wang, Sea-Fue ;

Chen, Frederick ;

Tsai, Ming-Jinn .

APPLIED PHYSICS LETTERS, 2008, 92 (02)

[5] Langmuir-Blodgett Assembly of Graphite Oxide Single Layers [J].

Cote, Laura J. ;

Kim, Franklin ;

Huang, Jiaxing .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (03) :1043-1049

[6]

ECHTERMEYER J, 2001, ARXIV07122026V1

[7] Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material [J].

Eda, Goki ;

Fanchini, Giovanni ;

Chhowalla, Manish .

NATURE NANOTECHNOLOGY, 2008, 3 (05) :270-274

[8] Graphene oxide thin film field effect transistors without reduction [J].

Jin, Meihua ;

Jeong, Hae-Kyung ;

Yu, Woo Jong ;

Bae, Dong Jae ;

Kang, Bo Ram ;

Lee, Young Hee .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (13)

[9] CMOS compatible nanoscale nonvolatile resistance, switching memory [J].

Jo, Sung Hyun ;

Lu, Wei .

NANO LETTERS, 2008, 8 (02) :392-397

[10] Electronic two-terminal bistable graphitic memories [J].

Li, Yubao ;

Sinitskii, Alexander ;

Tour, James M. .

NATURE MATERIALS, 2008, 7 (12) :966-971

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