Low frequency noise characterization of 0.25 mu m Si CMOS transistors

The low frequency (LF) noise and random telegraph signal (RTS) fluctuations in 0.25 mu m complementary metal-oxide-semiconductor (CMOS) devices are investigated, We find that the 1/f noise stems from fluctuations in carrier number for both n and p channel MOS devices. The slow oxide trap concentration deduced from the noise data is approximate to 10(17) eV/cm(3) in agreement with state-of-the-art gate oxides. The study of some particular RTSs is performed and provide the gate voltage dependence of the capture/emission times as well as of the drain current RTS amplitude. Drain current RTS amplitude as large as 10% have been observed, being somewhat larger than for 0.35 mu m CMOS technology. (C) 1997 Elsevier Science B.V.