MODEL FOR DRAIN CURRENT RTS AMPLITUDE IN SMALL-AREA MOS-TRANSISTORS

An analysis of the drain current RTS amplitude in small-area Si MOS transistors is conducted. A simple model for explaining the variations of the drain current random telegraph signals (RTS) amplitudes as a function of gate and drain voltages is also worked out. This model which is based on the concept of flatband voltage fluctuation predicts that the drain current RTS amplitude dependencies with biases can be strongly correlated to those of the transconductance-to-drain current ratio. RTS measurements performed on small-area MOS transistors partly support the validity of this model.