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Influence of chemical composition of CoFeB on tunneling magnetoresistance and microstructure in polycrystalline CoFeB/MgO/CoFeB magnetic tunnel junctions

被引：25
作者：
Tsunekawa, Koji
Choi, Young-Suk
Nagamine, Yoshinori
Djayaprawira, David D.
Takeuchi, Takashi
Kitamoto, Yoshitaka
机构：
[1] Canon ANELVA Corp, Proc Technol Dept, Electron Device Equipment Div, Fuchu, Tokyo 1838508, Japan
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 42-45期
关键词：
magnetic tunnel junction; tunneling magnetoresistance effect; MgO tunnel barrier; coherent tunneling; CoFeB; crystallization;
D O I：
10.1143/JJAP.45.L1152
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report, for the first time, the correlation between tunneling magnetoresistance (TMR) and the microstructure of polycrystalline CoFeB/MgO/CoFeB magnetic tunnel junctions with various Co/Fe ratios in the (CoFe)(81)B-19 reference and free layers. It is found that the Co/Fe ratio in the (CoFe)(81)B-19 reference layer strongly affects the (001) out-of-plane texture of the MgO tunnel barrier, resulting in the variation in TMR ratio. Further microstructure characterization of the magnetic tunnel junction with a higher TMR ratio and a stronger (001) out-of-plane texture in the MgO tunnel barrier reveals a grain-to-grain lattice match between the crystallized bcc CoFeB reference layer and MgO with a 45 degrees rotational epitaxial relationship, that is, CoFeB(001)[110]//MgO(001)[100].
引用
收藏
页码：L1152 / L1155
页数：4
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