Fabrication and electric properties of lapped type of TMR heads for ∼50 Gb/in2 and beyond

被引:34
作者
Araki, S [1 ]
Sato, K [1 ]
Kagami, T [1 ]
Saruki, S [1 ]
Uesugi, T [1 ]
Kasahara, N [1 ]
Kuwashima, T [1 ]
Ohta, N [1 ]
Sun, J [1 ]
Nagai, K [1 ]
Li, S [1 ]
Hachisuka, N [1 ]
Hatate, H [1 ]
Kagotani, T [1 ]
Takahashi, N [1 ]
Ueda, K [1 ]
Matsuzaki, M [1 ]
机构
[1] TDK Corp, Data Storage Technol Ctr, Nagano 3850009, Japan
关键词
CPP geometry; electric properties; magnetic tunnel junction; shot noise; TMR head; tunnel GMR;
D O I
10.1109/TMAG.2002.988914
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Tunnel giant magnetoresistance (TMR) heads at similar to50 Gb/in(2) have been fabricated using improved lapping process. Together with writer of 2.0 T pole materials, recording performance has been demonstrated at magnetic write width of 0.28 mum and magnetic read width of 0.18 mum. The resistance area product of final wafer data is around 5 Omega (.) mum(2), with lead and contact resistance included, resulting in a final head resistance of around 200 Omega. The output voltage achieved for 1 mA bias current is 42 mV/mum, and the isolated pulses are stable. With a discrete preamplifier, the track density as measured by "747 curve" is 94 kTPI at a bit-error rate of 10(-4) and the linear density is 508 kBPI, achieving an areal density of 48 Gb/in(2). The noise analysis reveals that the noises come mainly from media and shot noise.
引用
收藏
页码:72 / 77
页数:6
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