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Growth, electronic properties and thermal stability of the Fe/Al2O3 interface

被引：26
作者：
Arranz, A
Pérez-Dieste, V
Palacio, C [1 ]
机构：
[1] Univ Autonoma Madrid, Dept Fis Aplicada, Fac Ciencias, C XII, E-28049 Madrid, Spain
[2] Cent Univ Paris Sud, LURE, F-91898 Orsay, France
来源：
SURFACE SCIENCE | 2002年 / 521卷 / 1-2期
关键词：
growth; X-ray photoelectron spectroscopy; photoemission (total yield); metallic films; magnetic films; iron; aluminum oxide;
D O I：
10.1016/S0039-6028(02)02306-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Soft X-ray photoelectron spectroscopy and resonant photoemission have been used to study the growth and electronic properties of Fe ultrathin films deposited on Al2O3 substrates. A simultaneous multilayer growth mode has been found for Fe growth at room temperature. For iron coverages below 1 ML, Fe2+ species are formed at the Fe/Al2O3 interface, followed by the formation of a metallic iron overlayer. The bonding of Fe at very low coverages occurs by charge transfer from Fe to surface oxygen atoms, and neither hybridisation of Fe and Al states nor reduction of the Al2O3 substrate are observed. The thermal stability of the interface has been also studied in the range 673-873 K. Annealing produces Fe agglomeration in such a way that some areas of the Al2O3 substrate become fully Fe-depleted. In these Fe-depleted areas, Fe2+ completely disappears and Al-0 reduced species are formed. This behaviour would explain the decrease in the magnetoresistance performance of magnetic tunnel junctions after annealing above 573 K. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：77 / 83
页数：7
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