Solid source MBE growth and regrowth of 1.55 mu m wavelength GaInAsP/InP ridge lasers

We report on the solid source molecular beam epitaxial growth of GaxIn(1-x)AsyP(1-y) and its application to separate confinement heterostructure laser diodes operating at 1.55 mu m. High-quality quaternary films were grown reproducibly with a band gap wavelength of 1.3 mu m. Separate confinement heterostructure laser diodes operating at 1.55 mu m were produced with active regions containing four Ga0.47In0.53As, Ga0.27In0.73As0.8P0.2, or InAs0.6P0.4 quantum wells. Broad area laser threshold current densities were as low as 275 ii.;cml and equal the best results reported for similar devices grown by other techniques. Ridge lasers were fabricated with threshold currents of 20 mA and external quantum efficiencies of 0.21 mW/mA per facet. Specular InP was regrown over etched ridges and was used to produce buried ridge laser diodes.