Mobility dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple quantum wells

被引：10

作者：

Adachi, T ^{[1
]}

Ohno, Y ^{[1
]}

Terauchi, R ^{[1
]}

Matsukura, F ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Sendai, Miyagi 9808577, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2000年 / 7卷 / 3-4期

基金：

日本学术振兴会;

关键词：

spin relaxation; electron spin; InGaAs/InAlAs quantum wells;

D O I：

10.1016/S1386-9477(00)00107-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have measured electron spin relaxation time (tau(e)) in undoped and n-type InGaAs/lnAlAs quantum wells (QWs) as a function of electron quantized energy (E-1e) and electron mobility (mu) at room temperature. For Ei, dependence, the trend can be explained either by the D'yakonov-Perel' (DP) theory or by the Elliott-Yafet (EY) theory. On the other hand, it is difficult to explain the complex mu-dependence of tau(e) by either of the theories. Our experimental results suggest that further improvement of the theories might be necessary to fully explain the relaxation mechanism in InGaAs QWs. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1015 / 1019

页数：5

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