Electrolyte-gated charge accumulation in organic single crystals

被引：116

作者：

Shimotani, Hidekazu

Asanuma, Haruhiko

Takeya, Jun

Iwasa, Yoshihiro

机构：

[1] Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

[3] Osaka Univ, Dept Chem, Toyonaka, Osaka 5600043, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期

关键词：

D O I：

10.1063/1.2387884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Comparative studies of electrolyte-gated and SiO2-gated field-effect transistors have been carried out on rubrene single crystals by experimentally estimating their accumulated charges. The capacitance of the electrolyte gate at 1 mHz was 15 mu F/cm(2), which is more than two orders of magnitude larger than that of the 100-nm-thick SiO2 gate dielectric. The maximum carrier density in the electrolyte gate was 0.33 hole/molecule, which is considerably larger than that in the SiO2 gate. Furthermore, the transfer characteristics of the electrolyte-gate field-effect transistor showed reversible-peak behavior at an accumulated carrier density of 0.23 hole/molecule. (c) 2006 American Institute of Physics.

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