AlSb/InAs HEMTs with a TiW/Au gate metalization for improved stability

被引：9

作者：

Boos, JB

Bennett, BR

Kruppa, W

Park, D

Mittereder, J

Chang, W

Turner, NH

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] George Washington Univ, Washington, DC 20052 USA

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 02期

关键词：

TiW; HEMTs; HFETs; AlSb; InAs;

D O I：

10.1016/S0038-1101(02)00192-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication and characteristics of AlSb/InAs high electron mobility transistors (HEMTs) with a TiW/Au gate metalization. Using gate leakage and S-parameter measurements as a measure of stability, the HEMTs were found to be thermally stable up to 180 degreesC when heat treated in a H-2/N-2 ambient. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：181 / 184

页数：4

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