Modeling of ultra-low-power AlSb/InAs HEMT-RITD circuits

被引：4

作者：

Ancona, MG ^{[1
]}

Boos, JB ^{[1
]}

Justh, EW ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850249

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MOBILE logic circuits composed of AlSb/InAs HEMT and RITD devices are simulated using SPICE. The individual HEMT and RITD devices are modeled directly from experimental measurements on devices fabricated at NRL and careful attention is paid to the treatment of the effects of impact ionization, trapping and other parasitics. Using these realistic device models the simulated circuits show proper latching behavior and are capable of operating at 20GHz at supply voltages of 0.4V. The power dissipation in the MOBILE core is around 0.3mW/gate.

引用

页码：130 / 133

页数：4

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