High-speed and low-power operation of a resonant tunneling logic gate MOBILE

被引：105

作者：

Maezawa, K ^{[1
]}

Matsuzaki, H

Yamamoto, M

Otsuji, T

机构：

[1] Nagoya Univ, Fac Engn, Nagoya, Aichi 46401, Japan

[2] Nippon Telegraph & Tel Corp, Syst Elect Labs, Kanagawa 24301, Japan

[3] Nippon Telegraph & Tel Corp, Opt Network Syst Labs, Kanagawa 24301, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 03期

关键词：

D O I：

10.1109/55.661171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-speed operations up to 35 Gb/s were demonstrated for a resonant tunneling (RT) logic gate monostable-bistable transition logic element (MOBILE), The test circuit consisted of a MOBILE and a DCFL-type output buffer, and it was fabricated using InP-based resonant tunneling diode/HEMT integration technology, This operation bit rate is close to the cutoff frequency of the 0.7-mu m gate HEMT's used in the circuit, and was obtained after improvement of the output buffer design. This result indicates the high-speed potential of the MOBILE, though the speed is still limited by the buffer, The power dissipation of the MOBILE was also discussed based on a simple equivalent circuit model of RTDs. This revealed that the power dissipation is as small as 2 mW/gate over a wide range of operation bit rates.

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收藏

页码：80 / 82

页数：3

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