Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

被引：116

作者：

Hums, C.

Blaesing, J.

Dadgar, A.

Diez, A.

Hempel, T.

Christen, J.

Krost, A.

Lorenz, K.

Alves, E.

机构：

[1] Otto Von Guericke Univ, Inst Expt Phys, Fak Naturwissen, D-39016 Magdeburg, Germany

[2] Inst Tecnol & Nucl, P-2686953 Sacavem, Portugal

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 02期

关键词：

D O I：

10.1063/1.2424649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors present a detailed study of Al1-xInxN layers covering the whole composition range of 0.09 < x < 1. All layers were grown on GaN on Si(111) templates using metal-organic vapor phase epitaxy. For 0.13 < x < 0.32 samples grow fully strained and without phase separation. At higher In concentrations, the crystalline quality starts to deteriorate and a transition to three-dimensional growth is observed. A comparison of their experimental data with theoretically predicted phase diagrams reveals that biaxial strain increases the stability of the alloy.

引用

页数：3

共 21 条

[1] Growth of group III nitrides by metalorganic molecular beam epitaxy
Abernathy, CR
MacKenzie, JD
Donovan, SM
[J]. JOURNAL OF CRYSTAL GROWTH, 1997, 178 (1-2) : 74 - 86
[2] Simulated annealing analysis of Rutherford backscattering data
Barradas, NP
Jeynes, C
Webb, RP
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (02) : 291 - 293
[3] BRIOT O, 1998, MOVPE GROWTH NITRIDE, P70
[4] ON SPINODAL DECOMPOSITION
CAHN, JW
[J]. ACTA METALLURGICA, 1961, 9 (09): : 795 - 801
[5] High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
Carlin, JF
Ilegems, M
[J]. APPLIED PHYSICS LETTERS, 2003, 83 (04) : 668 - 670
[6] Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1 μm in thickness
Dadgar, A
Bläsing, J
Diez, A
Alam, A
Heuken, M
Krost, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (11B): : L1183 - L1185
[7] High-current AlInN/GaN field effect transistors
Dadgar, A
Neuburger, M
Schulze, F
Bläsing, J
Krtschil, A
Daumiller, I
Kunze, M
Günther, KM
Witte, H
Diez, A
Kohn, E
Krost, A
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (05): : 832 - 836
[8] High-sheet-charge-carrier-density AlInN/GaN field-effect transistors on Si(111)
Dadgar, A
Schulze, F
Bläsing, J
Diez, A
Krost, A
Neuburger, M
Kohn, E
Daumiller, I
Kunze, M
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (22) : 5400 - 5402
[9] Davydov VY, 2002, PHYS STATUS SOLIDI B, V234, P787, DOI 10.1002/1521-3951(200212)234:3<787::AID-PSSB787>3.0.CO
[10] 2-H

← 1 2 3 →