Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

The authors present a detailed study of Al1-xInxN layers covering the whole composition range of 0.09 < x < 1. All layers were grown on GaN on Si(111) templates using metal-organic vapor phase epitaxy. For 0.13 < x < 0.32 samples grow fully strained and without phase separation. At higher In concentrations, the crystalline quality starts to deteriorate and a transition to three-dimensional growth is observed. A comparison of their experimental data with theoretically predicted phase diagrams reveals that biaxial strain increases the stability of the alloy.