Fabrication of antireflection nanostructures by hybrid nano-patterning lithography

被引：35

作者：

Kang, Young Hun ^{[1
,2
]}

Oh, Sang Soon ^{[1
]}

Kim, Young-Sung ^{[3
]}

Choi, Choon-Gi ^{[1
,2
]}

机构：

[1] Elect & Telecommun Res Inst, CCMRL, Taejon 305700, South Korea

[2] Korea Univ Sci & Technol UST, Sch Engn Adv Device Technol, Taejon 305333, South Korea

[3] Sungkyunkwan Univ, Suwon 440746, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 02期

关键词：

Antireflection; Nanostructures; Nanoimprint lithography; Nanosphere lithography; POLYMERS;

D O I：

10.1016/j.mee.2009.06.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Antireflection (AR) narrostructures are fabricated on a glass substrate using hybrid nano-patterning lithography (H-NPL) consisting of nanosphere lithography (NSL) and UV-nanoimprint lithography (UV-NIL). The shape and diameter of the AR nanostructures were controlled by fabricating Si masters with different RIE conditions. The shapes of the AR nanostructures were a pillar-type and a corn-type. The diameters of the AR nanostructures were about 350 and 250 nm, respectively. AR narrostructures were successfully nanoimprinted on glass in accordance with Si master prepared by NSL. The pillar-type AR nanostructure with diameter of 350 nm exhibited the transmittance of over 98% in the wavelength range from 1100 to 2200 nm. From the results, the fabricated AR nanostructures demonstrate the possibility to improve the efficiency of optoelectronic devices such as a photo-detector and an IR-LED. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

引用

页码：125 / 128

页数：4

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