Ion irradiation and defect formation in single layer graphene

被引:211
作者
Compagnini, Giuseppe [1 ]
Giannazzo, Filippo [2 ]
Sonde, Sushant [2 ,3 ]
Raineri, Vito [2 ]
Rimini, Emanuele [2 ,4 ]
机构
[1] Univ Catania, Dept Chem, I-95123 Catania, Italy
[2] CNR, IMM, I-95121 Catania, Italy
[3] Scuola Super Catania, I-95123 Catania, Italy
[4] Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy
关键词
CARBON; GRAPHITE; LENGTH;
D O I
10.1016/j.carbon.2009.07.033
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ion irradiation by 500 keV C+ ions has been used to introduce defects into graphene sheets deposited on SiO2 in a controlled way. The combined use of Raman spectroscopy and atomic force microscopy (AFM) allowed one to clarify the mechanisms of disorder formation in single layers, bilayers and multi-layers of graphene. The ratio between the D and G peak intensities in the Raman spectra of single layers is higher than for bilayers and multi-layers, indicating a higher amount of disorder. This cannot be only ascribed to point defects, originating from direct C+-C collisions, but also the different interactions of single layers and few layers with the substrate plays a crucial role. As demonstrated by AFM, for irradiation at fluences higher than 5 x 10(13) cm(-2), the morphology of single layers becomes fully conformed to that of the SiO2 substrate, i.e. graphene ripples are completely suppressed, while ripples are still present on bilayer and multi-layers. The stronger interaction of a single layer with the substrate roughness leads to the observed larger amount of disorder. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3201 / 3207
页数:7
相关论文
共 24 条
  • [1] Carbon clustering in Si1-xCx formed by ion implantation
    Calcagno, L
    Compagnini, G
    Foti, G
    Grimaldi, MG
    Musumeci, P
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 120 (1-4) : 121 - 124
  • [2] Intrinsic and extrinsic performance limits of graphene devices on SiO2
    Chen, Jian-Hao
    Jang, Chaun
    Xiao, Shudong
    Ishigami, Masa
    Fuhrer, Michael S.
    [J]. NATURE NANOTECHNOLOGY, 2008, 3 (04) : 206 - 209
  • [3] sp/sp2 bonding ratio in sp rich amorphous carbon thin films
    D'Urso, L.
    Compagnini, G.
    Puglisi, O.
    [J]. CARBON, 2006, 44 (10) : 2093 - 2096
  • [4] Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane
    Elias, D. C.
    Nair, R. R.
    Mohiuddin, T. M. G.
    Morozov, S. V.
    Blake, P.
    Halsall, M. P.
    Ferrari, A. C.
    Boukhvalov, D. W.
    Katsnelson, M. I.
    Geim, A. K.
    Novoselov, K. S.
    [J]. SCIENCE, 2009, 323 (5914) : 610 - 613
  • [5] RAMAN-SCATTERING FROM ION-IMPLANTED GRAPHITE
    ELMAN, BS
    DRESSELHAUS, MS
    DRESSELHAUS, G
    MABY, EW
    MAZUREK, H
    [J]. PHYSICAL REVIEW B, 1981, 24 (02) : 1027 - 1034
  • [6] Metastable Frenkel pair defect in graphite: Source of Wigner energy?
    Ewels, CP
    Telling, RH
    El-Barbary, AA
    Heggie, MI
    Briddon, PR
    [J]. PHYSICAL REVIEW LETTERS, 2003, 91 (02) : 1 - 025505
  • [7] Raman spectrum of graphene and graphene layers
    Ferrari, A. C.
    Meyer, J. C.
    Scardaci, V.
    Casiraghi, C.
    Lazzeri, M.
    Mauri, F.
    Piscanec, S.
    Jiang, D.
    Novoselov, K. S.
    Roth, S.
    Geim, A. K.
    [J]. PHYSICAL REVIEW LETTERS, 2006, 97 (18)
  • [8] Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO2
    Geringer, V.
    Liebmann, M.
    Echtermeyer, T.
    Runte, S.
    Schmidt, M.
    Rueckamp, R.
    Lemme, M. C.
    Morgenstern, M.
    [J]. PHYSICAL REVIEW LETTERS, 2009, 102 (07)
  • [9] Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy
    Giannazzo, F.
    Sonde, S.
    Raineri, V.
    Rimini, E.
    [J]. NANO LETTERS, 2009, 9 (01) : 23 - 29
  • [10] Energy band-gap engineering of graphene nanoribbons
    Han, Melinda Y.
    Oezyilmaz, Barbaros
    Zhang, Yuanbo
    Kim, Philip
    [J]. PHYSICAL REVIEW LETTERS, 2007, 98 (20)