Low-energy electron microscopy/x-ray magnetic circular dichroism photoemission electron microscopy study of epitaxial MnAs on GaAs

被引：26

作者：

Bauer, E ^{[1
]}

Cherifi, S

Daeweritz, L

Kaestner, M

Heun, S

Locatelli, A

机构：

[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

[2] Sincrotrone Trieste, I-34012 Basovizza, TS, Italy

[3] Paul Drude Inst Festkorperelekt, D-101117 Berlin, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 06期

关键词：

D O I：

10.1116/1.1525005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial MnAs films on GaAs(001) substrates are studied at room temperature and in the completely ferromagnetic state below room temperature with low-energy electron microscopy, x-ray magnetic circular dichroism photoemission electron microscopy,. and low-energy electron diffraction. The combination of these techniques shows a clear relation between the two-phase structure of the layers and their magnetic domain structure. (C) 2002 American Vacuum Society.

引用

页码：2539 / 2542

页数：4

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