Moore's law forever?

被引：394

作者：

Lundstrom, M ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

SCIENCE | 2003年 / 299卷 / 5604期

关键词：

D O I：

10.1126/science.1079567

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：210 / 211

页数：2

共 24 条

[11]

Hoyt JL, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P23, DOI 10.1109/IEDM.2002.1175770

[12]

Huang XJ, 2001, IEEE T ELECTRON DEV, V48, P880, DOI 10.1109/16.918235

[13]

*IEEE, 2002, INT EL DEV M IEDM SA

[14]

JAVEY A, IN PRESS NATURE MAT

[15] Limits on silicon nanoelectronics for terascale integration [J].

Meindl, JD ;

Chen, Q ;

Davis, JA .

SCIENCE, 2001, 293 (5537) :2044-2049

[16]

Mizuno T, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P31, DOI 10.1109/IEDM.2002.1175772

[17]

Murata K, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P937, DOI 10.1109/IEDM.2002.1175990

[18]

Ota K, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P27, DOI 10.1109/IEDM.2002.1175771

[19] Perspectives: Device physics - Pushing the limits [J].

Packan, PA .

SCIENCE, 1999, 285 (5436) :2079-+

[20] Coulomb blockade and the Kondo effect in single-atom transistors [J].

Park, J ;

Pasupathy, AN ;

Goldsmith, JI ;

Chang, C ;

Yaish, Y ;

Petta, JR ;

Rinkoski, M ;

Sethna, JP ;

Abruña, HD ;

McEuen, PL ;

Ralph, DC .

NATURE, 2002, 417 (6890) :722-725

← 1 2 3 →