Submicron ferroelectric domain structures tailored by high-voltage scanning probe microscopy

被引：145

作者：

Rosenman, G ^{[1
]}

Urenski, P

Agronin, A

Rosenwaks, Y

Molotskii, M

机构：

[1] Tel Aviv Univ, Dept Elect Engn Phys Elect, IL-69978 Ramat Aviv, Israel

[2] Tel Aviv Univ, Wolfson Mat Res Ctr, IL-69978 Ramat Aviv, Israel

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 01期

关键词：

D O I：

10.1063/1.1534410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a high voltage atomic force microscope that allowed us to tailor submicrometer ferroelectric domains in bulk ferroelectrics. One- and two-dimensional domain configurations have been fabricated in LiNbO3, RbTiOPO4, and RbTiOAsO4 ferroelectric crystals. It is found that the application of superhigh electric fields (reaching 5x10(7) V/cm) by the atomic force microscope tip leads to a unique polarization reversal mechanism, and open the way to a technology for photonic and acoustic devices. (C) 2003 American Institute of Physics.

引用

页码：103 / 105

页数：3

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