Compositional and structural evolution of sputtered Ti-Al-N

被引:76
作者
Chen, Li [1 ,2 ]
Moser, Martin [1 ]
Du, Yong [2 ]
Mayrhofer, Paul H. [1 ]
机构
[1] Univ Leoben, Dept Phys Met & Mat Testing, A-8700 Leoben, Austria
[2] Cent S Univ, State Key Lab Powder Met, Changsha 410083, Hunan, Peoples R China
基金
奥地利科学基金会;
关键词
Physical vapour deposition (PVD); Ti-Al-N; Reactive sputtering; Composition; THIN-FILMS; MECHANICAL-PROPERTIES; PVD COATINGS; DEPOSITION; TI1-XALXN; GROWTH; PERFORMANCE; (TI; AL)N; HARDNESS; YTTRIUM;
D O I
10.1016/j.tsf.2009.04.056
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The compositional and structural evolution of Ti-Al-N thin films as a function of the total working gas pressure (p(T)), the N-2-to-total pressure ratio (p(N2)/p(T)), the substrate-to-target distance (ST), the substrate position,the magnetron power current (I-m), the externally applied magnetic field, and the energy and the ion-to-metal flux ratio of the ion bombardment during reactive sputtering of a Ti0.5Al0.5 target is investigated in detail. Based on this variation we propose that the different poisoning states of the Ti and At particles of the powder-metallurgically prepared Ti0.5Al0.5 target in addition to scattering and angular losses of the sputter flux cause a significant modification in the Al/Ti ratio of the deposited thin films ranging from similar to 1.05 to 2.15. The compositional variation induces a corresponding structural modification between single-phase cubic, mixed cubic-hexagonal and single-phase hexagonal. However, the maximum At content for single-phase cubic Ti1-xAlxN strongly depends on the deposition conditions and was obtained with x = 0.66, for the coating deposited at 500 degrees C, p(T) = 0.4 Pa, ST = 85 mm, and p(N2)/p(T) = 17%. Our results show, that in particular, the N-2-to-total pressure ratio in combination with the sputtering power density of the Ti0.5Al0.5 compound target has a pronounced effect on the Al/Ti ratio and the structure development of the coatings prepared. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:6635 / 6641
页数:7
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