InP-based two-dimensional photonic crystal on silicon: In-plane Bloch mode laser

被引：109

作者：

Monat, C

Seassal, C

Letartre, X

Regreny, R

Rojo-Romeo, P

Viktorovitch, P

d'Yerville, ML

Cassagne, D

Albert, JP

Jalaguier, E

Pocas, S

Aspar, B

机构：

[1] Ecole Cent Lyon, CNRS, LEOM, F-69134 Ecully, France

[2] Univ Montpellier 2, CNRS, GES, F-34095 Montpellier 05, France

[3] CEA, DRT, LETI, Dept Technol Silicium, F-38054 Grenoble 9, France

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 27期

关键词：

D O I：

10.1063/1.1532554

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defectless two-dimensional photonic crystal structures have been fabricated by drilling holes in a thin multi-quantum-well InP-based heterostructure transferred onto a silicon host wafer. Extremely low group velocity modes, which correspond to the predicted photonic valence band edge, have been observed for different filling factors. Under pulsed optical pumping, room temperature laser operation around 1.5 mum has been achieved on these structures with a threshold in the milliwatt range. (C) 2002 American Institute of Physics. [DOI: 10.1063/1.1532554].

引用

收藏

页码：5102 / 5104

页数：3

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