Reflectance spectroscopy on GaN films under uniaxial stress

被引：29

作者：

Yamaguchi, AA ^{[1
]}

Mochizuki, Y ^{[1
]}

Sasaoka, C ^{[1
]}

Kimura, A ^{[1
]}

Nido, M ^{[1
]}

Usui, A ^{[1
]}

机构：

[1] NEC CORP LTD, OPTOELECT RES LABS, TSUKUBA, IBARAKI 305, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 03期

关键词：

Band structure - Calculations - Electronic density of states - Excitons - Metallorganic chemical vapor deposition - Semiconducting gallium compounds - Semiconductor lasers - Spectroscopy - Strain - Stresses - X ray diffraction;

D O I：

10.1063/1.119541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The uniaxial stress effects on valence band structures in GaN are investigated by reflectance spectroscopy. It is observed that the energy separation between A and B valence bands increases with the application of uniaxial stress in the c plane. The experimental results are analyzed on the basis of the k.p theory, and deformation potential D-5 is determined as -3.3 eV. It is indicated that the uniaxial strain effect could be utilized for improving GaN-based laser performance. (C) 1997 American Institute of Physics.

引用

页码：374 / 376

页数：3

共 16 条

[11] Effect of strain on GaN exciton spectra [J].

Orton, JW .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (07) :1026-1029

[12] Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy [J].

Reynolds, DC ;

Look, DC ;

Kim, W ;

Aktas, O ;

Botchkarev, A ;

Salvador, A ;

Morkoc, H ;

Talwar, DN .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) :594-596

[13] STUDY OF ELASTIC PROPERTIES OF GALLIUM NITRIDE [J].

SAVASTENKO, VA ;

SHELEG, AU .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 48 (02) :K135-K139

[14] Binding energy for the intrinsic excitons in wurtzite GaN [J].

Shan, W ;

Little, BD ;

Fischer, AJ ;

Song, JJ ;

Goldenberg, B ;

Perry, WG ;

Bremser, MD ;

Davis, RF .

PHYSICAL REVIEW B, 1996, 54 (23) :16369-16372

[15] Reduction of threshold current density of wurtzite GaN/AlGaN quantum well lasers by uniaxial strain in (0001) plane [J].

Suzuki, M ;

Uenoyama, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (8A) :L953-L955

[16] ELASTIC CONSTANTS OF SYNTHETIC SINGLE CRYSTAL CORUNDUM [J].

TEFFT, WE .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1966, A 70 (04) :277-+

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