Synthesis and structure of gallium nitride nanobelts

被引：52

作者：

Bae, SY

Seo, HW

Park, J ^{[1
]}

Yang, H

Song, SA

机构：

[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea

[2] Hanyang Univ, Coll Engn Sci, Ansan 425791, South Korea

[3] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

CHEMICAL PHYSICS LETTERS | 2002年 / 365卷 / 5-6期

关键词：

D O I：

10.1016/S0009-2614(02)01507-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Bulk-quantity wurtzite structured gallium nitride nanobelts have been synthesized on a large area of the silicon substrate by a reaction of gallium/gallium oxide and ammonia using nickel and boron oxide as catalysts. The widths of the nanobelts are in the range from 100 nm to 1 mum and the thickness is about 1/10 of the width. They usually have an uneven thickness and jagged side edges that are approximately symmetric to the growth direction. The growth directions of the nanobelts are not the same, but the [001] direction is always perpendicular to the belt plane. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：525 / 529

页数：5

共 26 条

[1] Single-crystalline gallium nitride nanobelts [J].