Low-temperature catalytic synthesis gallium nitride nanowires

被引：56

作者：

Chang, KW ^{[1
]}

Wu, JJ ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 701, Taiwan

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2002年 / 106卷 / 32期

关键词：

D O I：

10.1021/jp026152t

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Catalytic growth of high-purity GaN nanowires is achieved at temperatures of 750 and 620 degreesC using gallium acetylacetonate and ammonia gas. The straight single-crystal GaN nanowires with diameters in the range 15-60 nm are found to grow following the vermicular-like nanowires on Si(100) substrate at 750 degreesC via a vapor-liquid-solid (VLS) mechanism using Ni as a catalyst. Photoluminescence (PL) characteristics of the GaN nanowires show a UV emission peak ranging from 360 to 420 nm at room temperature. Successful growth of GaN nanowires at low temperatures is suggested to be due to sufficient gallium precursor provided by gallium acetylacetonate during synthesis.

引用

页码：7796 / 7799

页数：4

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