Scanning tunneling microscopic and spectroscopic characterization of diamond film prepared by capacitively coupled radio frequency CH3OH plasma with OH radical injection

Electronic structure at a surface of diamond film synthesized by a capacitively coupled radio frequency CH3OH plasma chemical vapor deposition with OH radical injection has been investigated. The electronic structure was characterized by using scanning tunneling microscopy and scanning tunneling spectroscopy in an ultrahigh vacuum condition. As a result, the electronic structure was identified as an n-type electronic structure at the surface, which was considerably different from those of boron-doped diamond films and amorphous carbon films. (C) 1997 American Institute of Physics.