Growth and investigation of the big area Lely-grown substrates

被引：5

作者：

Lebedev, AA ^{[1
]}

Tregubova, AS ^{[1
]}

Chelnokov, VE ^{[1
]}

Scheglov, MP ^{[1
]}

Glagovskii, AA ^{[1
]}

机构：

[1] COMPOZIT, PODOLSK 142100, MOSCOW, RUSSIA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 46卷 / 1-3期

关键词：

Lely methods; SiC crystals; substrates;

D O I：

10.1016/S0921-5107(96)01996-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

6H-SiC substrates grown by Lely method and modified Lely (LM) methods have been studied by X-ray diffractometry and X-ray topography. It has been shown that structural perfection of Lely substrates is significantly higher than that of LM substrates: the former have a dislocation density of 10(1)-10(3) dis cm(-2) (as compared with 10(3)-10(5) dis cm(-2) for latter). Our experiments show that with the use of modernized growth equipment it is possible to obtain Lely substrates with high structural perfection and an area equal to that of LM substrates (1-1.5 '' diameter). (C) 1997 Published by Elsevier Science S.A.

引用

页码：291 / 295

页数：5