Photoemission study of the initial stage of Er/Si(100) interface formation

The initial stage of Er/Si(100) interface formation has been investigated by using synchrotron radiation photoelectron spectroscopy: combined with low energy electron diffraction. Both the valence band and the core level peaks of the Si photoemission spectra shift rigidly with increasing Er coverage in the submonolayer region. Upon depositing 0.6 monolayers of Er on the Si(100) surface at room temperature, the surface Fermi level is ultimately pinned at 0.29eV above its initial value, which is equivalent to a Schottky barrier height of 0.67 eV. No evidence is found for the formation of Er silicides at the as-deposited surfaces. Annealing of the Er-covered Si(100) surfaces at 600degreesC results in the appearance of a new peak located 1.2 eV below the Si 2p peak, indicating the presence of some sort of Er silicide. Meanwhile, the Er 4f spectrum measured for samples upon annealing exhibits a well-resolved fine structure, implying that only monospecies of Er silicide may exist on the surface.