Scaling behavior in InAs/GaAs(001) quantum-dot formation

被引：39

作者：

Krzyzewski, TJ ^{[1
]}

Joyce, PB ^{[1
]}

Bell, GR ^{[1
]}

Jones, TS ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, Ctr Elect Mat & Devices, London SW7 2AY, England

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.66.201302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy has been used to investigate the nucleation and evolution of InAs/GaAs(001) quantum dots (QD's) grown by molecular beam epitaxy. No scaling behavior as a function of coverage is observed for the QD size distributions during their initial stages of formation. At coverages close to the critical coverage the shape of the QD volume distribution resembles an i=0 scaling curve, and a modified i=1 curve after saturation of the QD number density, with a crossover regime in between. The results show that strain has a significant influence during QD nucleation and the initial stages of growth, but is unimportant in the later stages of QD development. Comparison with classic nucleation theory indicates a large, temperature-dependent size for the critical nucleus (i=18 at 500 degreesC). This disagrees with conventional models of QD formation and highlights the limited applicability of simple growth theories in modeling complex heteroepitaxial growth systems.

引用

页码：1 / 4

页数：4

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