Carbon nanotube catalysis by metal silicide: resolving inhibition versus growth

被引:29
作者
Esconjauregui, Santiago
Whelan, Caroline M.
Maex, Karen
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium
关键词
D O I
10.1088/0957-4484/18/1/015602
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The catalytic activity of metal silicide for carbon nanotube (CNT) nucleation and growth is reported by systematically evaluating CNT synthesis on different metal silicide phases compared with pure metal catalysts. Using a combination of high-resolution microscopy, x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS), the influence of various pretreatment annealings on 1, 5 and 10 nm Ni and Co films sputter deposited on pristine Si(100) and SiO2 substrates has been explored in relation to their ability to catalyse CNT growth under a broad range of synthesis conditions. Under certain pretreatment and growth conditions metal silicide nanoparticles are as catalytically active as pure metal nanoparticles. The impact of these findings is significant. The considerable expertise on metal silicide already existing in silicon technology can be applied and extended for the integration of CNTs in electronics.
引用
收藏
页数:11
相关论文
共 43 条
  • [11] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
    Duan, XF
    Huang, Y
    Cui, Y
    Wang, JF
    Lieber, CM
    [J]. NATURE, 2001, 409 (6816) : 66 - 69
  • [12] Temperature selective growth of carbon nanotubes by chemical vapor deposition
    Ducati, C
    Alexandrou, I
    Chhowalla, M
    Amaratunga, GAJ
    Robertson, J
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (06) : 3299 - 3303
  • [13] Self-oriented regular arrays of carbon nanotubes and their field emission properties
    Fan, SS
    Chapline, MG
    Franklin, NR
    Tombler, TW
    Cassell, AM
    Dai, HJ
    [J]. SCIENCE, 1999, 283 (5401) : 512 - 514
  • [14] Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001)
    Fitting, L
    Zeman, MC
    Yang, WC
    Nemanich, RJ
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) : 4180 - 4184
  • [15] Density-controlled carbon nanotubes
    Hsu, CH
    Chen, CF
    Chen, CC
    Chan, SY
    [J]. DIAMOND AND RELATED MATERIALS, 2005, 14 (3-7) : 739 - 743
  • [16] HELICAL MICROTUBULES OF GRAPHITIC CARBON
    IIJIMA, S
    [J]. NATURE, 1991, 354 (6348) : 56 - 58
  • [17] Dual-catalyst growth of vertically aligned carbon nanotubes at low temperature in thermal chemical vapor deposition
    Jeong, HJ
    Jeong, SY
    Shin, YM
    Han, JH
    Lim, SC
    Eum, SJ
    Yang, CW
    Kim, NG
    Park, CY
    Lee, YH
    [J]. CHEMICAL PHYSICS LETTERS, 2002, 361 (3-4) : 189 - 195
  • [18] Mechanism of selective growth of carbon nanotubes on SiO2/Si patterns
    Jung, YJ
    Wei, BQ
    Vajtai, R
    Ajayan, PM
    [J]. NANO LETTERS, 2003, 3 (04) : 561 - 564
  • [19] Plasma-enhanced chemical vapour deposition growth of carbon nanotubes on different metal underlayers
    Kabir, MS
    Morjan, RE
    Nerushev, OA
    Lundgren, P
    Bengtsson, S
    Enokson, P
    Campbell, EEB
    [J]. NANOTECHNOLOGY, 2005, 16 (04) : 458 - 466
  • [20] Ni- and Co-based silicides for advanced CMOS applications
    Kittl, JA
    Lauwers, A
    Chamirian, O
    Van Dal, M
    Akheyar, A
    De Potter, M
    Lindsay, R
    Maex, K
    [J]. MICROELECTRONIC ENGINEERING, 2003, 70 (2-4) : 158 - 165