Plasma-enhanced chemical vapour deposition growth of carbon nanotubes on different metal underlayers

被引:38
作者
Kabir, MS
Morjan, RE [1 ]
Nerushev, OA
Lundgren, P
Bengtsson, S
Enokson, P
Campbell, EEB
机构
[1] Univ Gothenburg, Dept Expt Phys, SE-41296 Gothenburg, Sweden
[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
关键词
D O I
10.1088/0957-4484/16/4/022
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
One important requirement for future applications of carbon nanotube electronic devices is the ability to controllably grow carbon nanotubes on metal electrodes. Here we show that it is possible to grow small diameter (< 10 nm) vertically aligned carbon nanotubes on different metal underlayers using plasma-enhanced chemical vapour deposition. A crucial component is the insertion of a thin silicon layer between the metal and the catalyst particle. The electrical integrity of the metal electrode layer after plasma treatment and the quality of the metals as interconnects are also investigated.
引用
收藏
页码:458 / 466
页数:9
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