TRANSMISSION ELECTRON-MICROSCOPE STUDY OF THE INITIAL-STAGE OF FORMATION OF PD2SI AND PT2SI

被引：10

作者：

ABOELFOTOH, MO

ALESSANDRINI, A

DHEURLE, FM

机构：

来源：

关键词：

D O I：

10.1063/1.97426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1242 / 1244

页数：3

共 18 条

[1] Kinetics of formation of silicides: A review
d'Heurle, F. M.
Gas, P.
[J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (01) : 205 - 221
[2] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE
FREEOUF, JL
RUBLOFF, GW
HO, PS
KUAN, TS
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839
[3] TRANSITION-METAL SILICIDES - TRENDS IN THE BONDING IN THE BULK AND AT THE INTERFACE
GRUNTHANER, PJ
GRUNTHANER, FJ
MADHUKAR, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 637 - 638
[4] LAIBOWITZ RB, 1982, TREATISE MATERIALS S, V24, P285
[5] THIN-FILM COMPOUNDS IN PLANAR PT-SI REACTION
MAJNI, G
COSTATO, M
PANINI, F
CELOTTI, G
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1985, 46 (05) : 631 - 641
[6] CHEMICAL-REACTION AND SILICIDE FORMATION AT THE PT/SI INTERFACE
MATZ, R
PURTELL, RJ
YOKOTA, Y
RUBLOFF, GW
HO, PS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (02): : 253 - 258
[7] INITIAL REACTIONS AT THE INTERFACE OF PT AND AMORPHOUS-SILICON
NEMANICH, RJ
THOMPSON, MJ
JACKSON, WB
TSAI, CC
STAFFORD, BL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 519 - 523
[8] NICOLET MA, 1983, VLSI ELECTRONICS MIC, V8, P330
[9] RUBLOFF G, 1986, MATER RES SOC S P, V54, P5
[10] MATERIAL REACTION AND SILICIDE FORMATION AT THE REFRACTORY-METAL SILICON INTERFACE
RUBLOFF, GW
TROMP, RM
VANLOENEN, EJ
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1600 - 1602