MATERIAL REACTION AND SILICIDE FORMATION AT THE REFRACTORY-METAL SILICON INTERFACE

被引：40

作者：

RUBLOFF, GW ^{[1
]}

TROMP, RM ^{[1
]}

VANLOENEN, EJ ^{[1
]}

机构：

[1] INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 23期

关键词：

D O I：

10.1063/1.96829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1600 / 1602

页数：3

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[1] CHEMICAL AND STRUCTURAL ASPECTS OF REACTION AT THE TI SI INTERFACE
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[7] MICROSCOPIC PROPERTIES AND BEHAVIOR OF METAL-SEMICONDUCTOR INTERFACES
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[8] MICROSCOPIC PROPERTIES AND BEHAVIOR OF SILICIDE INTERFACES
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[9] ION-BEAM CRYSTALLOGRAPHY OF METAL SILICON INTERFACES - PD-SI(111)
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[10] ION-BEAM ANALYSIS OF THE REACTION OF PD WITH SI(100) AND SI(111) AT ROOM-TEMPERATURE
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[J]. SURFACE SCIENCE, 1983, 124 (01) : 1 - 25