ION-BEAM ANALYSIS OF THE REACTION OF PD WITH SI(100) AND SI(111) AT ROOM-TEMPERATURE

被引：44

作者：

TROMP, RM ^{[1
]}

VANLOENEN, EJ ^{[1
]}

IWAMI, M ^{[1
]}

SMEENK, RG ^{[1
]}

SARIS, FW ^{[1
]}

NAVA, F ^{[1
]}

OTTAVIANI, G ^{[1
]}

机构：

[1] IST FIS,I-41100 MODENA,ITALY

来源：

SURFACE SCIENCE | 1983年 / 124卷 / 01期

关键词：

D O I：

10.1016/0039-6028(83)90332-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1 / 25

页数：25

共 35 条

[1] EXPLOITING ENERGY-DEPENDENT PHOTOEMISSION IN SI D-METAL INTERFACES - THE SI(111)-PD CASE [J].

ABBATI, I ;

ROSSI, G ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :636-640

[2]

ANDERSEN HH, 1978, H STOPPING POWERS RA

[3] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].

ANDREWS, JM ;

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59

[4] CHARGE STATES OF 25-150 KEV H AND HE-4 BACKSCATTERED FROM SOLID SURFACES [J].

BUCK, TM ;

WHEATLEY, GH ;

FELDMAN, LC .

SURFACE SCIENCE, 1973, 35 (01) :345-361

[5]

Chu WK., 1978, BACKSCATTERING SPECT

[6] ATOMIC DISPLACEMENTS IN THE SI(111)-(7X7) SURFACE [J].

CULBERTSON, RJ ;

FELDMAN, LC ;

SILVERMAN, PJ .

PHYSICAL REVIEW LETTERS, 1980, 45 (25) :2043-2046

[7] SI(001) SURFACE STUDIES USING HIGH-ENERGY ION-SCATTERING [J].

FELDMAN, LC ;

SILVERMAN, PJ ;

STENSGAARD, I .

NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :589-593

[8] SILICIDE INTERFACE STOICHIOMETRY [J].

FREEOUF, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :910-916

[9] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J].

FREEOUF, JL ;

RUBLOFF, GW ;

HO, PS ;

KUAN, TS .

PHYSICAL REVIEW LETTERS, 1979, 43 (24) :1836-1839

[10] METAL-SILICON INTERFACE FORMATION - THE NI-SI AND PD-SI SYSTEMS [J].

GRUNTHANER, PJ ;

GRUNTHANER, FJ ;

MADHUKAR, A ;

MAYER, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :649-656

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